Case Study: 3000 – 5000 nm AR 2 Side Silicon

Case Study:

This multi-layer anti-reflection coating was designed for use with Lead Selenide (PbSe) detectors and Indium Antimonide (InSb) detectors. The uncoated silicon substrate has an uncoated maximum transmission of just over 54% causing significant signal loss for both Lead Selenide and Indium Antimonide detectors across the sensitivity range of 1000 – 5200 nm. This anti-reflection coating achieves greater than 97.0% average transmission between 3000 – 5000 nm significantly reducing signal loses. Lead Selenide and Indium Antimonide detectors are both widely used across the photonics industry in many applications. This particular anti-reflection coating is used by some of our leading gas detection customers due to its high transmission level through the mid infrared where many of the common gases have strong absorption signals.

This process is one of our standard anti reflection processes, and it is very popular. All of our anti reflection coatings can be adapted and coated onto any substrate with any refractive index, please contact us to discuss the specifics of your requirement.